TO-92 Plastic-Encapsulate Transistors
2SC2328
TRANSISTOR (NPN)
FEATURES z Complement to 2SA928A z High DC Current Gai...
TO-92 Plastic-Encapsulate
Transistors
2SC2328
TRANSISTOR (
NPN)
FEATURES z Complement to 2SA928A z High DC Current Gain
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value 30 30 5 2 0.75 167 150
-55~+150
1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g
Unit V V V A W
℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE VCE(sat) VBE Cob fT
Test conditions IC= 100µA,IE=0 IC=10mA,IB=0 IE=1mA,IC=0 VCB=30V,IE=0 VEB=5V,IC=0 VCE=2V, IC=500mA IC=1.5A,IB=0.03A VCE=2V, IC=500mA VCB=10V,IE=0, f=1MHz VCE=2V,IC=500mA
Min Typ Max Unit 30 V 30 V 5V
0.1 μA 0.1 μA 100 320 2V 1V 30 pF 120 MHz
CLASSIFICATION OF hFE
RANK RANGE
O 100-200
Y 160-320
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8/21/2013
Typical Characteristics
2SC2328
COLLECTOR CURRENT IC (mA)
BASE-EMITTER SATURATION VOLTAGE VBEsat (V)
1400 1200 1000
800 600 400 200
0 0
Static Characteristic
5.0mA
4.5mA 4.0mA 3.5mA
COMMO...