Document
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC3075
2SC3075
Switching Regulator and High Voltage Switching Applications
DC-DC Converter Applications
DC-AC Converter Applications
Unit: mm
• Excellent switching times: tr = 1.0 μs (max) tf = 1.5 μs (max), (IC = 0.5 A)
• High collector breakdown voltage: VCEO = 400 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
500
V
400
V
7
V
0.8 A
1.5
0.5
A
1.0 W
10
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2010-02-05
2SC3075
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage
Symbol
Test Condition
ICBO IEBO V (BR) CBO V (BR) CEO
hFE
VCE (sat) VBE (sat)
VCB = 400 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 0.1 A VCE = 5 V, IC = 0.5 A IC = 0.1 A, IB = 0.01 A IC = 0.1 A, IB = 0.01 A
Min Typ. Max Unit
―
―
100
μA
―
―
100
μA
500 ―
―
V
400 ―
―
V
20
―
100
10
―
―
―
―
0.5
V
―
―
1.0
V
Rise on time Switching time Storage time
tr
OUTPUT
―
―
1.0
20 μs
IB1
INPUT
IB1 400 Ω
tstg
IB2 IB2
―
―
2.5
μs
VCC ≈ 200 V
Fall time
tf
IB1 = −IB2 = 0.05 A,
Duty cycle ≤ 1%
―
―
1.5
Marking
C3075
Part No. (or abbreviation code) Lot No. Note 1
Note 1:
A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2010-02-05
Collector current IC (mA)
1000 Common emitter Tc = 25°C
800
600
400
200
IC – VCE
80
60 40 30 20 10 5 IB = 2 mA
0
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
10
Common emitter 5 IC/IB = 10 3
VCE (sat) – IC
1 0.5 0.3
0.1 0.05 0.03
1
Tc = 100°C
25 −40
3
10
30
100
300
Collector current IC (mA)
1000
Collector-emitter saturation voltage VCE (sat) (V)
DC current gain hFE
2SC3075
hFE – IC
300
Tc = 100°C 100
50
25
30
−40
10
5
3
Common emitter
VCE = 5 V
1
1
3
10
30
100
300
1000
Collector current IC (mA)
10
Common emitter 5 IC/IB = 5 3
VCE (sat) – IC
1 0.5 0.3
0.1 0.05 0.03
1
Tc = 100°C
25 −40
3
10
30
100
300
Collector current IC (mA)
1000
Collector-emitter saturation voltage VCE (sat) (V)
Base-emitter saturation voltage VBE (sat) (V)
VBE (sat) – IC
10
Common emitter
5
IC/IB = 10
3
1
Tc = −40°C
0.5
0.3
25
100
0.1
1
3
10
30
100
300
1000
Collector current IC (mA)
Base-emitter saturation voltage VBE (sat) (V)
VBE (sat) – IC
10
Common emitter
5
IC/IB = 5
3
1
Tc = −40°C
0.5
0.3
25
100
0.1
1
3
10
30
100
300
1000
Collector current IC (mA)
3
2010-02-05
Collector current IC (A)
1 Common emitter VCE = 5 V
IC – VBE
10−1
10−2
Tc = 100°C 25 −40
10−3
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage VBE (V)
Switching Characteristics
100
50
IC/IB = 10
30
IB1 = −IB2
Pulse width = 20 μs
10
tstg
5
Duty cycle ≤ 1% Tc = 25°C
3
tf 1
0.5
0.3
tr
0.1
0
0.1
0.2
0.3
0.4
0.5
Collector current IC (A)
Collector current IC (mA)
Collector current IC (A)
2SC3075
1000 800
IC – VBE
Common emitter VCE = 5 V
600
400
Tc = 100°C 25
−40
200
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-emitter voltage VBE (V)
Safe Operating Area
3
IC max (pulsed)* 1 IC max (continuous)
10 μs* 100 μs*
0.5
DC operation
Tc = 25°C
0.3
10 ms*
1 ms*
0.1 0.05 0.03
0.01 1
100 ms*
*: Single nonrepetitive pulse Tc = 25°C
Curves must be derated linearly with increase in temperature.
3
10
3.