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C3075 Dataheets PDF



Part Number C3075
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SC3075
Datasheet C3075 DatasheetC3075 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3075 2SC3075 Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications Unit: mm • Excellent switching times: tr = 1.0 μs (max) tf = 1.5 μs (max), (IC = 0.5 A) • High collector breakdown voltage: VCEO = 400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collecto.

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TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3075 2SC3075 Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications Unit: mm • Excellent switching times: tr = 1.0 μs (max) tf = 1.5 μs (max), (IC = 0.5 A) • High collector breakdown voltage: VCEO = 400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 500 V 400 V 7 V 0.8 A 1.5 0.5 A 1.0 W 10 150 °C −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-02-05 2SC3075 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CBO V (BR) CEO hFE VCE (sat) VBE (sat) VCB = 400 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 0.1 A VCE = 5 V, IC = 0.5 A IC = 0.1 A, IB = 0.01 A IC = 0.1 A, IB = 0.01 A Min Typ. Max Unit ― ― 100 μA ― ― 100 μA 500 ― ― V 400 ― ― V 20 ― 100 10 ― ― ― ― 0.5 V ― ― 1.0 V Rise on time Switching time Storage time tr OUTPUT ― ― 1.0 20 μs IB1 INPUT IB1 400 Ω tstg IB2 IB2 ― ― 2.5 μs VCC ≈ 200 V Fall time tf IB1 = −IB2 = 0.05 A, Duty cycle ≤ 1% ― ― 1.5 Marking C3075 Part No. (or abbreviation code) Lot No. Note 1 Note 1: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-02-05 Collector current IC (mA) 1000 Common emitter Tc = 25°C 800 600 400 200 IC – VCE 80 60 40 30 20 10 5 IB = 2 mA 0 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 10 Common emitter 5 IC/IB = 10 3 VCE (sat) – IC 1 0.5 0.3 0.1 0.05 0.03 1 Tc = 100°C 25 −40 3 10 30 100 300 Collector current IC (mA) 1000 Collector-emitter saturation voltage VCE (sat) (V) DC current gain hFE 2SC3075 hFE – IC 300 Tc = 100°C 100 50 25 30 −40 10 5 3 Common emitter VCE = 5 V 1 1 3 10 30 100 300 1000 Collector current IC (mA) 10 Common emitter 5 IC/IB = 5 3 VCE (sat) – IC 1 0.5 0.3 0.1 0.05 0.03 1 Tc = 100°C 25 −40 3 10 30 100 300 Collector current IC (mA) 1000 Collector-emitter saturation voltage VCE (sat) (V) Base-emitter saturation voltage VBE (sat) (V) VBE (sat) – IC 10 Common emitter 5 IC/IB = 10 3 1 Tc = −40°C 0.5 0.3 25 100 0.1 1 3 10 30 100 300 1000 Collector current IC (mA) Base-emitter saturation voltage VBE (sat) (V) VBE (sat) – IC 10 Common emitter 5 IC/IB = 5 3 1 Tc = −40°C 0.5 0.3 25 100 0.1 1 3 10 30 100 300 1000 Collector current IC (mA) 3 2010-02-05 Collector current IC (A) 1 Common emitter VCE = 5 V IC – VBE 10−1 10−2 Tc = 100°C 25 −40 10−3 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base-emitter voltage VBE (V) Switching Characteristics 100 50 IC/IB = 10 30 IB1 = −IB2 Pulse width = 20 μs 10 tstg 5 Duty cycle ≤ 1% Tc = 25°C 3 tf 1 0.5 0.3 tr 0.1 0 0.1 0.2 0.3 0.4 0.5 Collector current IC (A) Collector current IC (mA) Collector current IC (A) 2SC3075 1000 800 IC – VBE Common emitter VCE = 5 V 600 400 Tc = 100°C 25 −40 200 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-emitter voltage VBE (V) Safe Operating Area 3 IC max (pulsed)* 1 IC max (continuous) 10 μs* 100 μs* 0.5 DC operation Tc = 25°C 0.3 10 ms* 1 ms* 0.1 0.05 0.03 0.01 1 100 ms* *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 3 10 3.


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