HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power
PD - 95835
IRF3709Z IRF3709ZS IR...
Description
Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power
PD - 95835
IRF3709Z IRF3709ZS IRF3709ZL
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
30V 6.3m: 17nC
Benefits
l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage
and Current
TO-220AB IRF3709Z
D2Pak IRF3709ZS
TO-262 IRF3709ZL
Absolute Maximum Ratings
Parameter VDS Drain-to-Source Voltage
VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation Maximum Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
iRθJC
Junction-to-Case
gRθJA Junction-to-Ambient (PCB Mount)
Max. 30 ± 20
87h 62h
350 79 40 0.53 -55 to + 175
300 (1.6mm from case)
y y10 lbf in (1.1N m)
Typ. ––– –––
Max. 1.89 40
Units V A
W W/°C
°C
Units °C/W
Notes through are on page 12 www.irf.com
1
1/16/04
IRF3709Z/S/L
Static @ TJ = 25°C (unless otherwise specified)
BVDSS ∆ΒVDSS/∆TJ RDS(on)
VGS(th) ∆VGS(th)/∆TJ IDSS
IGSS
gfs Qg
Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakag...
Similar Datasheet