Si4856DY

New Product N-Channel 30-V MOSFET Si4856DY Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.006 @ VGS = 10 V 0.0085 @ VGS = 4.5 V ID (A) 17 14 FEATURES D TrenchFETr Power MOSFETS D 100% RG Tested APPLICATIONS D Buck Converter D Synchronous Rectifier - Secondary Rectifier S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 30 "20 17 12 14 9 "50 2.7 1.40 3.0 1.6 2.0 1.0 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71881 S-03662—Rev. B, 03-Apr-03 t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 34 67 15 Maximum 41 80 19 Unit _C/W www.vishay.com 1 Si4856DY Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb VGS(th) I...