ME4856-G

N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4856/ME4856-G FEATURES ● RDS(ON)≦6mΩ@VGS=10V ● RDS(ON)≦8.5mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Battery Powered System ● DC/DC Converter ● Load Switch e Ordering Information: ME4856 (Pb-free) ME4856-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Maximum Power Dissipation TA=25℃ TA=70℃ Operating Junction and Storage Temperature Range Thermal Resistance-Junction to Ambient* * The device mounted on 1in2 FR4 board with 2 oz copper Symbol VDS VGS ID IDM PD TJ, Tstg RθJA Maximum Ratings 30 ±20 16 12.9 65 2.5 1.6 -55 to 150 50 Unit V V A A W ℃ ℃/W Aug, 2012-Ver4.2 01 ME4856/ME4856-G N-Channel 30-V(D...