N-Channel 30-V(D-S) MOSFET
GENERAL DESCRIPTION
The ME4856 is the N-Channel logic enhancement mode power field effect tra...
N-Channel 30-V(D-S) MOSFET
GENERAL DESCRIPTION
The ME4856 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
ME4856
FEATURES
● RDS(ON)≦6mΩ@VGS=10V ● RDS(ON)≦8.5mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● Battery Powered System ● DC/DC Converter ● Load Switch
PIN CONFIGURATION
(SOP-8) Top View
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current( TJ =150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Pulse Source-Drain Diode Current
Maximum Power Dissipation
TA=25℃ TA=70℃
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
thermal Resistance-Junction to Case
* The device mounted on 1in2 FR4 board with 2 oz copper
Symbol VDSS VGSS
ID
IDM IS ISM
PD
TJ
RθJA
RθJC
Limit
30
±20
17 14 50 2.7 50 3.0 2.0 -55 to 150 T≦10 sec
30
Steady State 34
60
July, 2008-Ver4.0
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