2N2369

2N2369, 2369A High Speed Switching Transistors Features: NPN Silicon Planar Epitaxial Transistors. Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power and High Speed Switching Applications. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E - 0.76 F - 1.27 G - 2.97 H 0.91 1.17 J 0.71 1.21 K 12.70 - L 45° Dimensions : Millimetres Pin Configuration 1. Emitter 2. Base 3. Collector Page 1 31/05/05 V1.0 2N2369, 2369A High Speed Switching Transistors Absolute Maximum Ratings Parameter Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Collector Current Peak (10µs Pulse) Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at Tc = 25°C Tc = 100°C Derate above 100°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC IC (Peak) PD PD Tj, Tstg Value 15 40 4.5 200 500 360 2.06 1.2 0.68 6.85 -65 to +200 Unit V mA mW mW/°C W mW/°C °C Electrical Characteristics (Ta = 25°C unless otherwise specified) Parameter Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Symbol VCEO*(sus) VCES VCBO VEBO Test Condition IC = 10mA, IB = 0 IC = 10µA, VBE = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 2N2369 2N2369A >15 >40 >40 >4.5 Collector Cu...