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K1846 Dataheets PDF



Part Number K1846
Manufacturers Panasonic
Logo Panasonic
Description Silicon N-Channel Power F-MOS FET
Datasheet K1846 DatasheetK1846 Datasheet (PDF)

Power F-MOS FETs 2SK1846 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply s Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Ratings Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse A.

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Power F-MOS FETs 2SK1846 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply s Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Ratings Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Avalanche energy capacity VDSS VGSS ID IDP EAS* 800 ±30 ±3 ±6 20 Allowable power dissipation TC = 25°C Ta = 25°C PD 40 1.3 Channel temperature Storage temperature Tch 150 Tstg −55 to +150 * L = 4.5mH, IL = 3A, VDD = 50V, 1 pulse Unit V V A A mJ W °C °C s Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions Drain to Source cut-off current IDSS Gate to Source leakage current IGSS Drain to Source breakdown voltage VDSS Gate threshold voltage Vth Drain to Source ON-resistance RDS(on) Forward transfer admittance | Yfs | Diode forward voltage VDSF Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss Reverse transfer capacitance (Common Source) Crss Turn-on time ton Fall time tf Turn-off time (delay time) td(off) Thermal resistance between channel and case Rth(ch-c) VDS = 640V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VDS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 2A VDS = 25V, ID = 2A IDR = 3A, VGS = 0 VDS = 20V, VGS = 0, f = 1MHz VGS = 10V, ID = 2A VDD = 200V, RL = 100Ω 10.5min. 2.0 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.5 unit: mm 3.4±0.3 1.0±0.1 1.5max. 0.8±0.1 2.54±0.3 5.08±0.5 123 1.1max. 0.5max. 1: Gate 2: Drain 3: Source N Type Package min typ max Unit 0.1 mA ±1 µA 800 V 1 5V 3.2 4 Ω 1.5 2.4 S −1.6 V 730 pF 90 pF 40 pF 40 ns 35 ns 105 ns 3.125 °C/W 1 Allowable power dissipation PD (W) Drain current ID (A) Drain current ID (A) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) Drain current ID (A) VGS=15V 7V 10V Forward transfer admittance |Yfs| (S) Power F-MOS FETs ID  VDS 6 TC=25˚C 5 6V 4 3 2 5V 1 40W 4V 0 0 10 20 30 40 50 60 Drain to source voltage VDS (V) ID  VGS 6 VDS=25V 5 TC=0˚C 25˚C 100˚C 150˚C 4 3 2 1 0 0 2 4 6 8 10 Gate to source voltage VGS (V) PD  Ta 50 (1) TC=Ta (2) Without heat sink (PD=1.3W) 40 30 (1) 20 10 (2) 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) | Yfs |  ID 3 TC=25˚C VDS=25V 100˚C 2 150˚C 1 0 0123456 Drain current ID (A) 10000 3000 Ciss, Coss, Crss  VDS f=1MHz TC=25˚C 1000 300 Ciss 100 Coss 30 Crss 10 0 50 100 150 200 Drain to source voltage VDS (V) Area of safe operation (ASO) 100 Non repetitive pulse TC=25˚C 30 10 IDP 3 ID t<10µs 1 t=100µs 0.3 1ms 0.1 10ms 0.03 DC 0.01 1 3 10 30 100 300 1000 Drain to source voltage VDS (V) Avalanche energy capacity EAS (mJ) Switching time ton,tf,td(off) (ns) Drain to source .


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