Document
Power F-MOS FETs
2SK1846
Silicon N-Channel Power F-MOS FET
s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown
s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC Pulse
Avalanche energy capacity
VDSS VGSS ID IDP EAS*
800 ±30 ±3 ±6 20
Allowable power dissipation
TC = 25°C Ta = 25°C PD
40 1.3
Channel temperature Storage temperature
Tch 150 Tstg −55 to +150
* L = 4.5mH, IL = 3A, VDD = 50V, 1 pulse
Unit V V A A mJ
W
°C °C
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Vth
Drain to Source ON-resistance RDS(on)
Forward transfer admittance
| Yfs |
Diode forward voltage
VDSF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time
ton
Fall time
tf
Turn-off time (delay time)
td(off)
Thermal resistance between channel and case Rth(ch-c)
VDS = 640V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VDS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 2A VDS = 25V, ID = 2A IDR = 3A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VGS = 10V, ID = 2A VDD = 200V, RL = 100Ω
10.5min. 2.0
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5
unit: mm
3.4±0.3 1.0±0.1
1.5max.
0.8±0.1
2.54±0.3 5.08±0.5 123
1.1max. 0.5max.
1: Gate 2: Drain 3: Source N Type Package
min typ max Unit
0.1 mA
±1 µA
800 V
1 5V
3.2 4
Ω
1.5 2.4
S
−1.6 V
730 pF
90 pF
40 pF
40 ns
35 ns
105 ns
3.125 °C/W
1
Allowable power dissipation PD (W) Drain current ID (A)
Drain current ID (A) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
Drain current ID (A)
VGS=15V 7V 10V
Forward transfer admittance |Yfs| (S)
Power F-MOS FETs
ID VDS
6 TC=25˚C
5
6V 4
3
2 5V
1 40W
4V 0
0 10 20 30 40 50 60
Drain to source voltage VDS (V)
ID VGS
6 VDS=25V
5
TC=0˚C
25˚C 100˚C
150˚C 4
3
2
1
0 0 2 4 6 8 10
Gate to source voltage VGS (V)
PD Ta
50 (1) TC=Ta (2) Without heat sink (PD=1.3W)
40
30 (1)
20
10
(2) 0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
| Yfs | ID
3
TC=25˚C
VDS=25V
100˚C 2
150˚C
1
0 0123456
Drain current ID (A)
10000 3000
Ciss, Coss, Crss VDS
f=1MHz TC=25˚C
1000 300
Ciss
100
Coss 30
Crss
10 0 50 100 150 200
Drain to source voltage VDS (V)
Area of safe operation (ASO)
100 Non repetitive pulse TC=25˚C
30
10 IDP 3 ID
t<10µs
1
t=100µs 0.3
1ms 0.1
10ms 0.03
DC
0.01 1 3 10 30 100 300 1000
Drain to source voltage VDS (V)
Avalanche energy capacity EAS (mJ)
Switching time ton,tf,td(off) (ns)
Drain to source .