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MSC23B236A-60DS8 Dataheets PDF



Part Number MSC23B236A-60DS8
Manufacturers OKI electronic componets
Logo OKI electronic componets
Description 2M-Word x 36-Bit DRAM Module
Datasheet MSC23B236A-60DS8 DatasheetMSC23B236A-60DS8 Datasheet (PDF)

¡¡SemicondSucetormiconductor MSC23B236A-xxBS8/DS8 MSC23B236A-xxBS8/DS8 2,097,152-Word ¥ 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The Oki MSC23B236A-xxBS8/DS8 is a fully decoded 2,097,152-word ¥ 36-bit CMOS dynamic random access memory composed of four 16-Mb (1M ¥ 16) DRAMs in SOJ and four 2-Mb (1M ¥ 2) DRAMs in SOJ. The mounting of eight DRAMs together with decoupling capacitors on a 72pin glass epoxy SIMM Package supports any application where high density and large capacity of.

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¡¡SemicondSucetormiconductor MSC23B236A-xxBS8/DS8 MSC23B236A-xxBS8/DS8 2,097,152-Word ¥ 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The Oki MSC23B236A-xxBS8/DS8 is a fully decoded 2,097,152-word ¥ 36-bit CMOS dynamic random access memory composed of four 16-Mb (1M ¥ 16) DRAMs in SOJ and four 2-Mb (1M ¥ 2) DRAMs in SOJ. The mounting of eight DRAMs together with decoupling capacitors on a 72pin glass epoxy SIMM Package supports any application where high density and large capacity of storage memory are required. FEATURES • 2,097,152-word ¥ 36-bit (Parity) organization • 72-pin SIMM MSC23B236A-xxBS8 : Gold tab MSC23B236A-xxDS8 : Solder tab • Single 5 V supply ±10% tolerance • Input : TTL compatible • Output : TTL compatible, 3-state, nonlatch • Refresh : 1024 cycles/16 ms • CAS before RAS refresh, CAS before RAS hidden refresh, RAS-only refresh capability • Fast Page Mode capability PRODUCT FAMILY Family MSC23B236A-60BS8/DS8 MSC23B236A-70BS8/DS8 Access Time (Max.) tRAC 60 ns tAA 30 ns tCAC 15 ns 70 ns 35 ns 20 ns Cycle Time Power Dissipation (Min.) Operating (Max.) Standby (Max.) 110 ns 130 ns 3410 mW 3080 mW 44 mW 159 MSC23B236A-xxBS8/DS8 ¡ Semiconductor PIN CONFIGURATION MSC23B236A-xxBS8/DS8 3.38 ±0.13 *1 107.95 ±0.2 101.19 Typ. (Unit : mm) 9.3 Max. f 3.18 25.4 ±0.13 10.16 ±0.13 6.35 ±0.13 2.03 ±0.13 1 6.35 Typ. 1.27 ±0.1 R1.57 6.35 95.25 72 5.7 Min. 1.04 Typ. 1.27 +0.1 –0.08 *1 The common size difference of the board width 12.5 mm of its height is specified as ±0.2. The value above 12.5 mm is specified as ±0.5. Pin No. Pin Name 1 VSS 2 DQ0 3 DQ18 4 DQ1 5 DQ19 6 DQ2 7 DQ20 8 DQ3 9 DQ21 10 VCC 11 NC 12 A0 13 A1 14 A2 15 A3 Pin No. Pin Name 16 A4 17 A5 18 A6 19 NC 20 DQ4 21 DQ22 22 DQ5 23 DQ23 24 DQ6 25 DQ24 26 DQ7 27 DQ25 28 A7 29 NC 30 VCC Pin No. Pin Name 31 A8 32 A9 33 RAS3 34 RAS2 35 DQ26 36 DQ8 37 DQ17 38 DQ35 39 VSS 40 CAS0 41 CAS2 42 CAS3 43 CAS1 44 RAS0 45 RAS1 Pin No. Pin Name 46 NC 47 WE 48 NC 49 DQ9 50 DQ27 51 DQ10 52 DQ28 53 DQ11 54 DQ29 55 DQ12 56 DQ30 57 DQ13 58 DQ31 59 VCC 60 DQ32 Pin No. Pin Name 61 DQ14 62 DQ33 63 DQ15 64 DQ34 65 DQ16 66 NC 67 PD1 68 PD2 69 PD3 70 PD4 71 NC 72 VSS Presence Detect Pins Pin No. 67 68 69 70 Pin Name PD1 PD2 PD3 PD4 MSC23B236A -60BS8/DS8 NC NC NC NC MSC23B236A -70BS8/DS8 NC NC VSS NC 160 ¡ Semiconductor MSC23B236A-xxBS8/DS8 BLOCK DIAGRAM A0 - A9 CAS0 CAS1 WE RAS0 A0 - A9 RAS LCAS UCAS WE OE VSS DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 VCC DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 VCC A0 - A9 RAS LCAS UCAS WE OE VSS RAS2 A0 - A9 RAS CAS1 CAS2 WE OE VSS DQ1 DQ8 DQ1 DQ2 DQ17 DQ2 VCC VCC A0 - A9 RAS CAS1 CAS2 WE OE VSS A0 - A9 RAS LCAS UCAS WE OE VSS DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 VCC DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQ24 DQ25 DQ27 DQ28 DQ29 DQ30 DQ31 DQ32 DQ33 DQ34 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 VCC A0 - A9 RAS LCAS UCAS WE OE VSS CAS2 CAS3 VCC C1 VSS A0 - A9 RAS CAS1 CAS2 WE OE VSS DQ1 DQ26 DQ1 DQ2 DQ35 DQ2 VCC VCC A0 - A9 RAS CAS1 CAS2 WE OE VSS C8 RAS1 RAS3 161 MSC23B236A-xxBS8/DS8 ¡ Semiconductor ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Parameter Voltage on Any Pin Relative to VSS Voltage VCC Supply Relative to VSS Short Circuit Output Current Power Dissipation Operating Temperature Storage Temperature Symbol VIN, VOUT VCC IOS PD Topr Tstg Rating –1.0 to 7.0 –1.0 to 7.0 50 9.2 0 to 70 –40 to 125 Unit V V mA W °C °C Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Recommended Operating Conditions Parameter Power Supply Voltage Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min. 4.5 0 2.4 –1.0 Typ. 5.0 0 — — Max. 5.5 0 6.5 0.8 (Ta = 0°C to 70°C) Unit V V V V Capacitance Parameter Input Capacitance (A0 - A9) Input Capacitance (WE) Input Capacitance (RAS0 - RAS3) Input Capacitance (CAS0 - CAS3) I/O Capacitance (DQ0 - DQ35) Symbol CIN1 CIN2 CIN3 CIN4 CDQ Typ. — — — — — Note : Capacitance measured with Boonton Meter. Max. 53 65 20 35 20 (Ta = 25°C, f = 1 MHz) Unit pF pF pF pF pF 162 ¡ Semiconductor MSC23B236A-xxBS8/DS8 DC Characteristics Parameter Symbol Condition 0 V £ VI £ 6.5 V; Input Leakage Current ILI All other pins not under test = 0 V Output Leakage Current ILO DOUT disable 0 V £ VO £ 5.5 V Output High Voltage VOH IOH = –5.0 mA Output Low Voltage VOL IOL = 4.2 mA Average Power Supply Current (Operating) RAS, CAS cycling, ICC1 tRC = Min. Power Supply Current (Standby) Average Power RAS, CAS = VIH ICC2 RAS, CAS ≥ VCC –0.2 V RAS cycling, Supply Current (RAS-only .


MSC23B236A-70BS8 MSC23B236A-60DS8 MSC23B236A-70DS8


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