DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2365/2SK2366
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION Th...
DATA SHEET
MOS FIELD EFFECT
TRANSISTORS
2SK2365/2SK2366
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel
MOS Field Effect
Transistor designed for high voltage switching applications.
FEATURES Low On-Resistance
2SK2365: RDS(on) = 0.5 Ω (VGS = 10 V, ID = 5.0 A) 2SK2366: RDS(on) = 0.6 Ω (VGS = 10 V, ID = 5.0 A)
Low Ciss Ciss = 1 600 pF TYP. High Avalanche Capability Ratings Isolate TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2365/2SK2366) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±10
A
Drain Current (pulse)*
ID(pulse) ±40
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
75 W
Total Power Dissipation (TA = 25 ˚C)
PT2
1.5 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 10 A
Single Avalanche Energy**
EAS 143 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS (in millimeters)
10.6 MAX.
4.8 MAX.
3.6 ± 0.2 10.0
1.3 ± 0.2
3.0 ± 0.3 6.0 MAX. 5.9 MIN. 12.7 MIN. 15.5 MAX.
4 1 23
1.3 ± 0.2
0.5 ± 0.2
0.75 ± 0.1 2.54
2.8 ± 0.2
2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB
MP-25 (TO-220)
(10.0) 4
4.8 MAX. 1.3 ± 0.2
8.5 ± 0.2
1.0 ± 0.5 1.5 MAX.
1.0 ± 0.3
1.4 ± 0.2
(2.54) (2.54)
123
1.1 ± 0.4 3.0 ± 0.5
(0.5(0R.)8R)
0.5 ± 0.2
1. Gate 2. Drain 3. Source 4. Fin (Drain)
2.8 ± 0.2
MP-2...
