B1320

PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntcilnt.cmlnayactauiupnoe.dnecejstetdepe/sittnefnyyfanopp/lonleercodemwitatnyigpo fen.ourDisMcaionnttieProductnnualifecycleenstage.dce/ Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1320 Silicon PNP epitaxial planar type For low frequency power amplification Complementary to 2SD1991  Features  Allowing supply with the radial taping  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Rating –30 –25 –7 –100 –200 400 150 –55 to +150 Unit V V V mA mA mW °C °C  Package  Code MT-1-A1  Pin Name 1. Emitter 2. Collector 3. Base  Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Collector-base voltage (Emitter open) VCBO IC = –10 mA, IE = 0 –30 Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –25 Emitter-base voltage (Collector open) VEBO IE = –10 mA, IC = 0 –7 Collector-base cutoff current (Emitter open) ICBO VCB = –20 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCB = –20 V, IB = 0 Forward current transfer ratio * hFE VCE = –10 V, IC = –2 mA 160 Collector-emitter saturation voltage VCE(sat) I...