MPS650 MPS651 NPN MPS750 MPS751 PNP
COMPLEMENTARY SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:...
MPS650 MPS651
NPN MPS750 MPS751
PNP
COMPLEMENTARY SILICON
TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR MPS650, MPS750 series devices are complementary silicon
transistors designed for general purpose amplifier and switching applications requiring high gain at high collector current.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJA
Thermal Resistance
ΘJC
MPS650 MPS750
60
MPS651 MPS751
80
40 60
5.0
2.0
625
1.5
-65 to +150
200
83.3
ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS
ICBO
VCB=60V
ICBO
VCB=80V
IEBO
VEB=4.0V
BVCBO
IC=100μA
BVCEO
IC=10mA
BVEBO
IE=10μA
VCE(SAT) IC=1.0A, IB=100mA
VCE(SAT) IC=2.0A, IB=200mA
VBE(SAT) IC=1.0A, IB=100mA
VBE(ON)
VCE=2.0V, IC=1.0A
hFE VCE=2.0V, IC=50mA
hFE VCE=2.0V, IC=500mA
hFE VCE=2.0V, IC=1.0A
hFE VCE=2.0V, IC=2.0A
fT VCE=5.0V, IC=50mA, f=100MHz
MPS650 MPS750 MIN MAX - 100 -- 100 60 40 5.0 - 0.3 - 0.5 - 1.2 - 1.0 75 75 75 40 75 -
MPS651 MPS751 MIN MAX -- 100 - 100 80 60 5.0 - 0.3 - 0.5 - 1.2 - 1.0 75 75 75 40 75 -
UNITS V V V A
mW W °C °C/W °C/W
UNITS nA nA nA V V V V V V V
MHz
R1 (2-December 2014)
MPS650 MPS651
NPN MPS750 MPS751
PNP
COMPLEMENTA...