SDT03N04

SDT03N04Green Product Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor Ver 1.2 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 400V 1.5A 3.5 @ VGS=10V F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. S urface Mount P ackage. D G S SOT - 22 3 G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a TA=25°C IDM -Pulsed b PD Maximum Power Dissipation b TA=25°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Limit 400 ±30 1.5 6 2.98 -55 to 150 42 Units V V A A W °C °C/W Details are subject to change without notice. 1 Oct,08,2010 www.samhop.com.tw SDT03N04 Ver 1.2 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=320V , VGS=0V VGS= ±30V , VDS=0V 400 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance VDS=VGS , ID=250uA VGS=10V , ID=1A VDS=10V , ID=1A 2 DYNAMIC CHARACTERISTICS c CISS Input Capacitance COSS CRSS Output Capacitance Reverse Transfer Capacitance VDS=25V,VGS=0V f=1.0MHz SWITCHING CHARACTERISTICS c tD(ON) Turn-On Delay Time tr R...