Document
IGBT
LowVCE(sat)IGBTinTRENCHSTOPTM5technologycopackedwithRAPID2 fastandsoftantiparalleldiode
IKW30N65NL5
650VDuoPackIGBTanddiode LowVCE(sat)seriesfifthgeneration
Datasheet
IndustrialPowerControl
IKW30N65NL5
LowVCE(sat)seriesfifthgeneration
LowVCE(sat)IGBTinTRENCHSTOPTM5technologycopackedwithRAPID2 fastandsoftantiparalleldiode
FeaturesandBenefits:
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LowVCE(sat)L5technologyoffering •Verylowcollector-emittersaturationvoltageVCEsat •Best-in-Classtradeoffbetweenconductionandswitchinglosses •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating •RoHScompliant •CompleteproductspectrumandPSpicemodels: http://www.infineon.com/igbt/
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Applications: •Uninterruptiblepowersupplies •Solarphotovoltaicinverters •Weldingmachines
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KeyPerformanceandPackageParameters
Type
VCE IC VCEsat,Tvj=25°C
IKW30N65NL5
650V 30A
1.05V
Tvjmax 175°C
Marking K30ENL5
Package PG-TO247-3
2 Rev.2.1,2014-12-10
IKW30N65NL5
LowVCE(sat)seriesfifthgeneration
TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3 Rev.2.1,2014-12-10
IKW30N65NL5
LowVCE(sat)seriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C DCcollectorcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C Pulsedcollectorcurrent,tplimitedbyTvjmax1)
VCE IC ICpuls
650
85.0 62.0 120.0
V A A
Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs1) Diodeforwardcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C Diodepulsedcurrent,tplimitedbyTvjmax1)
IF IFpuls
120.0
50.0 34.0 120.0
A A A
Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) PowerdissipationTC=25°C PowerdissipationTC=100°C
Operating junction temperature
Storage temperature Soldering temperature,2) wave soldering 1.6mm (0.063in.) from case for 10s
VGE
Ptot Tvj Tstg
±20 ±30 227.0 114.0 -40...+175 -55...+150
260
V
W °C °C °C
Mounting torque, M3 screw Maximum of mounting processes: 3
M
0.6 Nm
ThermalResistance
Parameter Characteristic
IGBT thermal resistance, junction - case
Diode thermal resistance, junction - case
Thermal resistance junction - ambient
Symbol Conditions
Rth(j-c) Rth(j-c) Rth(j-a)
Max.Value
Unit
0.66 K/W 0.95 K/W 40 K/W
1) Defined by design. Not subject to production test. 2) Package not recommended for surface mount applications.
4
Rev.2.1,2014-12-10
IKW30N65NL5
LowVCE(sat)seriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current Transconductance
IGES gfs
VGE=0V,IC=0.20mA VGE=15.0V,IC=30.0A Tvj=25°C Tvj=100°C Tvj=150°C VGE=0V,IF=30.0A Tvj=25°C Tvj=100°C Tvj=150°C IC=0.40mA,VCE=VGE VCE=650V,VGE=0V Tvj=25°C Tvj=150°C Tvj=175°C VCE=0V,VGE=20V VCE=20V,IC=30.0A
min.
Value typ.
max. Unit
650 -
-V
-
1.05 1.35 1.05 -
V
- 1.04.