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UTP45N02

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N-CHANNEL ENHANCEMENT MODE

UNISONIC TECHNOLOGIES CO., LTD UTP45N02 N-CHANNEL ENHANCEMENT MODE Power MOSFET „ DESCRIPTION As N-Channel power MOSF...


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UTP45N02

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Description
UNISONIC TECHNOLOGIES CO., LTD UTP45N02 N-CHANNEL ENHANCEMENT MODE Power MOSFET „ DESCRIPTION As N-Channel power MOSFETs the UTP45N02 is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. „ FEATURES * 45A, 20V * RDS(ON) = 0.022Ω * Temperature compensating PSPICE model * Be driven directly from CMOS, NMOS, and TTL circuits * Peak current vs. pulse width curve „ SYMBOL 2.Drain *Pb-free plating product number: UTP45N02L 1.Gate 3.Source „ ORDERING INFORMATION Ordering Number Normal Lead Free Plating UTP45N02-TN3-R UTP45N02L-TN3-R UTP45N02-TN3-T UTP45N02L-TN3-T Package TO-252 TO-252 Pin Assignment 12 3 GD S GD S Packing Tape Reel Tube www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-180.A UTP45N02 Power MOSFET „ ABSOLUTE MAXIMUM RATINGS (Ta = 25 , unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±10 V Continuous Drain Current Power Dissipation Derate Above 25 ID 45 A PD 90 0.606 W W/ Junction Temperature Storage Temperature TJ TSTG +175 -55 ~ +175 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC MIN TYP „ ELECTRICAL CHARACTERISTICS (TC =25°C...




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