MDP4N60

MDP4N60/MDF4N60 N-channel MOSFET 600V MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  ID = 4.6A  RDS(ON) ≤ 2.0Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching D TO-220 MDP Series TO-220F MDF Series G S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg MDP4N60 MDF4N60 600 ±30 4.6 4.6* 2.9 2.9* 18.4 18.4* 92.5 34.7 0.74 0.28 9.25 4.5 170 -55~150 Unit V V A A A W W/ oC mJ V/ns mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) May. 2011 Version 1.5 Symbol RθJA RθJC MDP4N60 62.5 1.35 MDF4N60 62.5 3.6 Unit oC/W 1 MagnaChip Semiconductor Ltd. MDP4N60/MDF4N60 N-channel MOSFET 600V Ordering Information Part Number MDP4N60TH MDF4N60TH MD...