LAPT 2SC3284
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303)
Application : Audio and General Purp...
LAPT 2SC3284
Silicon
NPN Epitaxial Planar
Transistor (Complement to type 2SA1303)
Application : Audio and General Purpose
sAbsolute maximum ratings
Symbol
2SC3284
VCBO
150
VCEO
150
VEBO IC IB PC Tj Tstg
5 14 3 125(Tc=25°C) 150 –55 to +150
(Ta=25°C)
Unit V V V A A W °C °C
sElectrical Characteristics
(Ta=25°C)
Symbol
Conditions
2SC3284 Unit
ICBO IEBO V(BR)CEO
VCB=150V VEB=5V IC=25mA
100max 100max 150min
µA µA V
hFE VCE(sat) fT COB
VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=–2A VCB=10V, f=1MHz
50min∗ 2.0max 60typ 200typ
V MHz pF
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) (Ω) (A) (V) (V) (A)
60 12 5 10 –5 0.5
IB2 ton tstg tf (A) (µs) (µs) (µs)
–0.5 0.2typ 1.5typ 0.35typ
External Dimensions MT-100(TO3P)
15.6±0.4 9.6
4.8±0.2 2.0±0.1
1.8 5.0±0.2
19.9±0.3 4.0 2.0
20.0min 4.0max
a ø3.2±0.1 b
2
3
1.05
+0.2 -0.1
0.65
+0.2 -0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Type No.
b. Lot No.
Collector Current IC(A) 750mA
I C– V CE Characteristics (Typical)
14
650000mmAA
400mA
300mA
12
200mA
150mA
8 100mA
50mA 4
IB=20mA
0 0 12 34 Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V) 14
10 2
Collector Current IC(A)
–30˚C (Case Temp)
Temp)
1
IC=10A 5A
0
0
0.2 0.4
0.6 0.8
1.0
Base Current IB...