Document
Ordering number : ENN5443A
Features
• Low ON-resistance. • Low Qg.
2SK2617LS
N-Channl Silicon MOSFET
2SK2617LS
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm 2078C
[2SK2617LS]
10.0 3.2
4.5 2.8
3.5 7.2
16.0
0.6
16.1 3.6
0.9 1.2
1.2
2.4 14.0
0.75 0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
123 2.55 2.55
1 : Gate 2 : Drain 3 : Source
SANYO : TO-220FI(LS)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Electrical Characteristics at Ta=25°C
Tc=25˚C
Conditions
Ratings 500 ±30 4 16 2.0 25 150
--55 to +150
Unit V V A A W W °C °C
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Marking : K2617
Symbol
Conditions
V(BR)DSS IDSS IGSS
VGS(off) yfs
ID=1mA, VGS=0 VDS=500V, VGS=0 VGS=±30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=2A
min 500
3.5 1.1
Ratings typ
max
Unit
V
1.0 mA
±100 nA
5.5 V
2.2 S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22004 TS IM TA-100437 No.5443-1/4
2SK2617LS
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage
Symbol
RDS(on) Ciss Coss Crss Qg td(on) tr td(off) tf VSD
Conditions
ID=2A, VGS=15V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=200V, ID=4A, VGS=10V See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. IS=4A, VGS=0
Switching Time Test Circuit
VDD=200V
VGS=15V
PW=1µs D.C.≤0.5%
G
ID=2A RL=100Ω
D VOUT
P.G
RGS 50Ω
2SK2617LS S
Ratings min typ max
Unit
1.2 1.6 Ω
550 pF
190 pF
95 pF
15 nC
15 ns
15 ns
45 ns
25 ns
0.95
1.2 V
Drain Current, ID -- A
ID -- VDS
7
Tc=25°C 6 10V 15V
5
8V
4
3
2 7V
1
VGS=6V
0 0 2 4 6 8 1.0
Drain-to-Source Voltage, VDS -- V IT05191
RDS(on) -- VGS
4.0
Tc=25°C
3.5
3.0
2.5
2.0
2A 1.5 ID=4A
1.0 1A
0.5 0 2 4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS -- V IT05193
Static-Drain-to-Source On-State Resistance, RDS(on) -- mΩ
Drain Current, ID -- A
8
VDS=10V
7
ID -- VGS
Tc= --25°C
6 25°C
5
75°C
4
3
2
1
0 0
3.4 3.1 2.8 2.5 2.2 1.9 1.6 1.3 1.0 0.7 0.4 0.1
--50
5 10 15
Drain-to-Source Voltage, VDS -- V
RDS(on) -- Tc
20 IT05192
I D=I2DA=,2VAG, VS=G1S0=V15V
--25 0
25 50 75 100 125
Case Temperature, Tc -- °C
IT05194
No.5443-2/4
Static-Drain-to-Source On-State Resistance, RDS(on) -- mΩ
Forward Transfer Admittance, yfs -- S
Switching Time, SW Time -- ns
10 7 5 3 2
1.0 7 5 3 2
0.1 0.1
100
7 5
3
2
10 7 7
2.5
2SK2617LS
yfs -- ID
VDS=10V
25°C
Tc=
--25°C 75°C
23
5 7 1.0
23
Drain Current, ID -- A
SW Time -- ID
5 7 10 IT05195
VDD=200V VGS=15V
td(off)
tf tr
td(on)
1.0 2 3
Drain Current, ID -- A
PD -- Ta
57 IT05197
Drain Current, ID -- A
Forward Current, IF -- A Tc=75°C
25°C --25°C
IF -- VSD
100
7 5
VGS=0
3
2
10 7 5 3 2
1.0 7 5 3 2
0.1 7 5 3 2
0.01 7 5 3 2
0.001 0
0.3 0.6 0.9 1.2 1.5
Diode Forward Voltage, VSD -- V IT05196
ASO
3
2 IDP=16A
<1µs
10
7 5
ID=4A
100µs10µs
3 2
1.0 7 5
3
Operation in is limited by
this area RDS(on).
DC
op1e0ra01tmi0omsn1sms
2
0.1 7 5
3
2 Tc=25°C Single pulse
0.01 1.0 2 3 5 7 10 2 3 5 7 100 2
Drain-to-Source Voltage, VDS -- V
PD -- Tc
35
3 57 IT05198
Allowable Power Dissipation, PD -- W
30 2.0
25
1.5 20
1.0
0.5
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT05199
15
10
5
0 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT05120
Allowable Power Dissipation, PD -- W
No.5443-3/4
2SK2617LS
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the c.