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2SK2617LS Dataheets PDF



Part Number 2SK2617LS
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channl Silicon MOSFET
Datasheet 2SK2617LS Datasheet2SK2617LS Datasheet (PDF)

Ordering number : ENN5443A Features • Low ON-resistance. • Low Qg. 2SK2617LS N-Channl Silicon MOSFET 2SK2617LS Ultrahigh-Speed Switching Applications Package Dimensions unit : mm 2078C [2SK2617LS] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 1.2 2.4 14.0 0.75 0.7 Specifications Absolute Maximum Ratings at Ta=25°C 123 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Puls.

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Ordering number : ENN5443A Features • Low ON-resistance. • Low Qg. 2SK2617LS N-Channl Silicon MOSFET 2SK2617LS Ultrahigh-Speed Switching Applications Package Dimensions unit : mm 2078C [2SK2617LS] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 1.2 2.4 14.0 0.75 0.7 Specifications Absolute Maximum Ratings at Ta=25°C 123 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Electrical Characteristics at Ta=25°C Tc=25˚C Conditions Ratings 500 ±30 4 16 2.0 25 150 --55 to +150 Unit V V A A W W °C °C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Marking : K2617 Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) yfs ID=1mA, VGS=0 VDS=500V, VGS=0 VGS=±30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=2A min 500 3.5 1.1 Ratings typ max Unit V 1.0 mA ±100 nA 5.5 V 2.2 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22004 TS IM TA-100437 No.5443-1/4 2SK2617LS Continued from preceding page. Parameter Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol RDS(on) Ciss Coss Crss Qg td(on) tr td(off) tf VSD Conditions ID=2A, VGS=15V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=200V, ID=4A, VGS=10V See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. IS=4A, VGS=0 Switching Time Test Circuit VDD=200V VGS=15V PW=1µs D.C.≤0.5% G ID=2A RL=100Ω D VOUT P.G RGS 50Ω 2SK2617LS S Ratings min typ max Unit 1.2 1.6 Ω 550 pF 190 pF 95 pF 15 nC 15 ns 15 ns 45 ns 25 ns 0.95 1.2 V Drain Current, ID -- A ID -- VDS 7 Tc=25°C 6 10V 15V 5 8V 4 3 2 7V 1 VGS=6V 0 0 2 4 6 8 1.0 Drain-to-Source Voltage, VDS -- V IT05191 RDS(on) -- VGS 4.0 Tc=25°C 3.5 3.0 2.5 2.0 2A 1.5 ID=4A 1.0 1A 0.5 0 2 4 6 8 10 12 14 16 18 20 Gate-to-Source Voltage, VGS -- V IT05193 Static-Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A 8 VDS=10V 7 ID -- VGS Tc= --25°C 6 25°C 5 75°C 4 3 2 1 0 0 3.4 3.1 2.8 2.5 2.2 1.9 1.6 1.3 1.0 0.7 0.4 0.1 --50 5 10 15 Drain-to-Source Voltage, VDS -- V RDS(on) -- Tc 20 IT05192 I D=I2DA=,2VAG, VS=G1S0=V15V --25 0 25 50 75 100 125 Case Temperature, Tc -- °C IT05194 No.5443-2/4 Static-Drain-to-Source On-State Resistance, RDS(on) -- mΩ Forward Transfer Admittance, yfs -- S Switching Time, SW Time -- ns 10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 100 7 5 3 2 10 7 7 2.5 2SK2617LS yfs -- ID VDS=10V 25°C Tc= --25°C 75°C 23 5 7 1.0 23 Drain Current, ID -- A SW Time -- ID 5 7 10 IT05195 VDD=200V VGS=15V td(off) tf tr td(on) 1.0 2 3 Drain Current, ID -- A PD -- Ta 57 IT05197 Drain Current, ID -- A Forward Current, IF -- A Tc=75°C 25°C --25°C IF -- VSD 100 7 5 VGS=0 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0 0.3 0.6 0.9 1.2 1.5 Diode Forward Voltage, VSD -- V IT05196 ASO 3 2 IDP=16A <1µs 10 7 5 ID=4A 100µs10µs 3 2 1.0 7 5 3 Operation in is limited by this area RDS(on). DC op1e0ra01tmi0omsn1sms 2 0.1 7 5 3 2 Tc=25°C Single pulse 0.01 1.0 2 3 5 7 10 2 3 5 7 100 2 Drain-to-Source Voltage, VDS -- V PD -- Tc 35 3 57 IT05198 Allowable Power Dissipation, PD -- W 30 2.0 25 1.5 20 1.0 0.5 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT05199 15 10 5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- °C IT05120 Allowable Power Dissipation, PD -- W No.5443-3/4 2SK2617LS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the c.


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