TO-18 Type Infrared Emitting Diode
GL514/GL513F
GL514/GL513F
s Features
1. Output : GL514 Φ e MIN. 3.31mW at I F = 100mA GL513F Φ e MIN. 1.44mW at I F = 1...
Description
GL514/GL513F
GL514/GL513F
s Features
1. Output : GL514 Φ e MIN. 3.31mW at I F = 100mA GL513F Φ e MIN. 1.44mW at I F = 100mA 2. Beam angle : GL514 ∆θ : TYP. ± 7˚ GL513F ∆θ : TYP. ± 50˚ 3. To- 18 type standard package 4. High reliability, long operation life
TO-18 Type Infrared Emitting Diode
s Outline Dimensions
GL514 Glass lens φ 4.7 ± 0.1 φ 4.7 ± 0.1 Glass window φ3 4.5 GL513F 3.7MAX. 2 φ 0.45 13 φ 0.45 2.5 φ 5.7MAX. 1 2 1 1 Cathode 2 Anode GL514 6.6MAX. GL513F
( Unit : mm )
s Applications
1. Optoelectronic switches 2. Smoke detectors 3. Infrared applied systems
1. 0 ˚ 45 0 1.
φ 5.7MAX.
2.5
13
1. 0
2 1
45
˚
s Absolute Maximum Ratings
Parameter Power dissipation Forward current *1 Peak forward current Reverse voltage Operating temperature Storage temperature *2 Soldering temperature Symbol P IF I FM VR T opr T stg T sol
( Ta = 25˚C )
Rating 250 150 2 6 - 40 to + 125 - 55 to + 125 260 Unit mW mA A V ˚C ˚C ˚C
*1 Pulse width<= 200 µ s Duty ratio = 0.01 *2 For 10 seconds at the position of 1.3mm from the bottom face of can package.
s Electro-optical Characteristics
Parameter Forward voltage Peak forward voltage Reverse current Terminal capacitance
*3
1.
0
( Ta = 25˚C )
Conditions I F = 100mA I FM = 1.5A V R = 5V V = 0, f = 1MHz I F = 100mA I F = 100mA I F = 100mA MIN. 3.31 1.44 TYP. 1.35 2.75 70 5.35 2.88 950 45 MAX. 1.6 4.0 100 10.0 Unit V V µA pF mW mW nm nm
Symbol VF V FM IR Ct Φe λp ∆λ
Radiant flux
GL514 GL513F Peak emission wavelength Half intensity wavel...
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