MMBT8050

SMD General Purpose Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (NPN) MMBT8050 SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol VCEO VCBO VEBO IC PD RθJA PD RθJA TJ TSTG Description Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Total Device Power Dissipation, Alumina Substrate (Note 2) Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range MMBT8050 25 40 5.0 1.5 225 1.8 556 300 2.4 417 -55 to +150 -55 to +150 Unit V V V A mW mW/°C °C /W mW mW/°C °C /W °C °C Conditions TA=25 ˚C Derate above 25 ˚C TA=25 ˚C Derate above 25 ˚C Note: 1. FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.) 2. Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina. TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/AH Page 1 of 4 SMD General Purpose Transistor (NPN) MMBT8050 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol Description Min. Max. V(BR)CEO V(BR)CBO V(BR)EBO ICEO ICBO IEBO Collector-Emitter Brea...