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GL4800

Thin Type Infrared Emitting Diode

Description

GL4800 GL4800 s Features 1. Thin type ( Thickness : 1.5mm ) 2. Beam angle ( ∆θ : TYP. ± 30˚ ) 3. Radiant flux ( Φ e : MIN. 0.7mW at I F = 20mA ) 4. Epoxy resin package Thin Type Infrared Emitting Diode s Outline Dimensions Rest of gate 0.3 MAX. 3.0 ± 0.2 1.6 1.0 2 - C0.5 0.8 ( Unit : mm ) 1.5 ± 0.2 0.8 Pink transparent epoxy resin Protruded resin 1.7 φ...

Sharp Electrionic Components

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