D1411

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1411 DESCRIPTION www.dat·aWshiethet4TuO.co-2m20Fa package ·Low saturation voltage ·Complementary to 2SB1018 APPLICATIONS ·Power amplifier applications ·High current switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector -emitter voltage VEBO Emitter-base voltage IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 Ta=25 VALUE 100 80 5 7 1 30 2.0 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1411 CHARACTERISTICS Tj=25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.4A VBEsat Base-emitter saturation voltage IC=4A ;IB=0.4A ICBO Collector cut-off current VCB=100V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=1A ; VCE=1V hFE-2 DC current gain IC=4A ; VCE=1V fT Transition frequency VCE=4V;IC=1A COB Collector output capacitance f=1MHz ; VCB=10V;IE=0 Switching times ton Turn-on time tstg Storage time tf Fall time IB1=-IB2=0.3A VCC=30V ,RL=10A MIN TYP. MAX UNIT 80 V 0.25 0.5 V 0.9 1.4 V 5 µA 5 µA...