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IRFS52N15DPBF Dataheets PDF



Part Number IRFS52N15DPBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFS52N15DPBF DatasheetIRFS52N15DPBF Datasheet (PDF)

PD - 97002A Applications l High frequency DC-DC converters l Plasma Display Panel Benefits l Low Gate-to-Drain Charge to Reduce\ Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Lead-Free IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF HEXFET® Power MOSFET Key Parameters VDS VDS (Avalanche) min. RDS(ON) max @ 10V TJ max 150 200 32 175 V V m: °C TO-220AB IRFB52N15DPbF D2P.

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PD - 97002A Applications l High frequency DC-DC converters l Plasma Display Panel Benefits l Low Gate-to-Drain Charge to Reduce\ Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Lead-Free IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF HEXFET® Power MOSFET Key Parameters VDS VDS (Avalanche) min. RDS(ON) max @ 10V TJ max 150 200 32 175 V V m: °C TO-220AB IRFB52N15DPbF D2Pak TO-262 IRFS52N15DPbF IRFSL52N15DPbF Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V ‡ Continuous Drain Current, VGS @ 10V ‡ Pulsed Drain Current  Power Dissipation ‡ Power Dissipation ‡ Linear Derating Factor ‡ Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Thermal Resistance Max. 51* 36* 240 3.8 230* 1.5* ± 30 5.5 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V V/ns °C RθJC RθCS RθJA RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface † Junction-to-Ambient† Junction-to-Ambient‡ Typ. ––– 0.50 ––– ––– Max. 0.47* ––– 62 40 Units °C/W * RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium. Notes  through ‡ are on page 11 www.irf.com 1 09/22/10 IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current 150 ––– ––– 3.0 ––– ––– ––– ––– 0.16 ––– ––– 32 ––– 5.0 ––– 25 ––– 250 IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– 100 ––– ––– -100 Units V V/°C mΩ V µA nA Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 36A „ VDS = VGS, ID = 250µA VDS = 150V, VGS = 0V VDS = 120V, VGS = 0V, TJ = 150°C VGS = 30V VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance 19 ––– ––– ––– 60 89 ––– 18 27 ––– 28 42 ––– 16 ––– ––– 47 ––– ––– 28 ––– ––– 25 ––– ––– 2770 ––– ––– 590 ––– ––– 110 ––– ––– 3940 ––– ––– 260 ––– ––– 550 ––– S VDS = 50V, ID = 36A ID = 36A nC VDS = 75V VGS = 10V, „ VDD = 75V ns ID = 36A RG = .


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