Document
PD - 97002A
Applications
l High frequency DC-DC converters l Plasma Display Panel
Benefits
l Low Gate-to-Drain Charge to Reduce\ Switching Losses
l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
l Fully Characterized Avalanche Voltage and Current
l Lead-Free
IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF
HEXFET® Power MOSFET
Key Parameters
VDS VDS (Avalanche) min. RDS(ON) max @ 10V TJ max
150 200 32 175
V
V
m:
°C
TO-220AB IRFB52N15DPbF
D2Pak
TO-262
IRFS52N15DPbF IRFSL52N15DPbF
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C
VGS dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage
Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Thermal Resistance
Max. 51* 36* 240 3.8 230* 1.5* ± 30 5.5 -55 to + 175
300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Units
A
W
W/°C V
V/ns
°C
RθJC RθCS RθJA RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient
Typ. ––– 0.50 ––– –––
Max. 0.47* –––
62 40
Units °C/W
* RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes through are on page 11
www.irf.com
1
09/22/10
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
150 ––– –––
3.0 ––– –––
––– ––– 0.16 ––– ––– 32 ––– 5.0 ––– 25 ––– 250
IGSS
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
––– ––– 100 ––– ––– -100
Units V
V/°C mΩ V
µA
nA
Conditions
VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 36A VDS = VGS, ID = 250µA VDS = 150V, VGS = 0V VDS = 120V, VGS = 0V, TJ = 150°C VGS = 30V VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
19 ––– ––– ––– 60 89 ––– 18 27 ––– 28 42 ––– 16 ––– ––– 47 ––– ––– 28 ––– ––– 25 ––– ––– 2770 ––– ––– 590 ––– ––– 110 ––– ––– 3940 ––– ––– 260 ––– ––– 550 –––
S VDS = 50V, ID = 36A ID = 36A
nC VDS = 75V VGS = 10V, VDD = 75V
ns ID = 36A RG = .