IRFS52N15DPBF

PD - 97002A Applications l High frequency DC-DC converters l Plasma Display Panel Benefits l Low Gate-to-Drain Charge to Reduce\ Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Lead-Free IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF HEXFET® Power MOSFET Key Parameters VDS VDS (Avalanche) min. RDS(ON) max @ 10V TJ max 150 200 32 175 V V m: °C TO-220AB IRFB52N15DPbF D2Pak TO-262 IRFS52N15DPbF IRFSL52N15DPbF Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V ‡ Continuous Drain Current, VGS @ 10V ‡ Pulsed Drain Current  Power Dissipation ‡ Power Dissipation ‡ Linear Derating Factor ‡ Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Thermal Resistance Max. 51* 36* 240 3.8 230* 1.5* ± 30 5.5 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/°C V V/ns °C RθJC RθCS RθJA RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface † Junction-to-Ambient† Junction-to-Ambient‡ Typ. ––– 0.50 ––– ––– Max. 0.47* ––– 62 40 Units °C/W * RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical w...