2SC1008

TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR (NPN) FEATURES z General Purpose Switching and Amplification TO – 92 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 80 60 8 700 800 156 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE (sat) Cob fT Test conditions IC= 0.1mA,IE=0 IC=10mA,IB=0 IE=0.01mA,IC=0 VCB=60V,IE=0 VEB=5V,IC=0 VCE=2V, IC=50mA IC=500mA,IB=50mA IC=500mA,IB=50mA VCB=10V,IC=0, f=1MHz VCE=10V,IC= 50mA Min Typ Max Unit 80 V 60 V 8V 0.1 μA 0.1 μA 40 400 0.4 V 1.1 V 8 pF 30 MHz CLASSIFICATION OF hFE RANK R RANGE 40-80 O 70-140 Y 120-240 G 200-400 B,Aug,2014 Typical Characterisitics COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 0.25 COMMON EMITTER Ta=25℃ 0.20 Static Characteristic 1mA 900uA 800...