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C1008

SeCoS

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente 2SC1008 0.7A , 80 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “...


SeCoS

C1008

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Description
Elektronische Bauelemente 2SC1008 0.7A , 80 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  General Purpose Switching and Amplification. CLASSIFICATION OF hFE Product-Rank 2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-G Range 40~80 70~140 120~240 200~400 TO-92 GH J AD B K E CF Emitter Base Collector REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76  Base Collector   Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction, Storage Temperature VCBO VCEO VEBO IC PC RθJA TJ, TSTG 80 60 8 0.7 800 156 150, -55~150 Unit V V V A mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test condition Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Voltage Transition Frequency Collector Output Capacitance V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob 80 60 8 40 30 - - - V IC=0.1mA, IE=0 - - V IC=10mA, ...




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