Side View and Thin Flat Type Infrared Emitting Diode
GL4100
GL4100
s Features
1. Compact flat package 2. Wide beam angle
Side View and Thin Flat Type Infrared Emitting Dio...
Description
GL4100
GL4100
s Features
1. Compact flat package 2. Wide beam angle
Side View and Thin Flat Type Infrared Emitting Diode
s Outline Dimensions
3.0 2 - C0.5
Rugged resin Gate burr Detector center
(Unit : mm)
1.8 0.7
Pale red transparent epoxy resin
0.3MAX.
(Half intensity angle : ± 90˚ )
0.7 1.4 4˚ 4.0
4˚ 0.1MAX. 2
0.9MAX.
s Applications
1. Mouses 2. Track balls
(1.7 )
15 17.5 + - 10
Rugged resin 0.2 MAX.
0.5MIN.
0.3 2 - 0.45 + - 0.1
1.4
4˚
4˚ 0.15
0.3 2 - 4+ - 0.1
1
1
2
(2.54 ) 6˚ 6˚ 2.8 6˚ 6˚
1 Anode 2 Cathode
* ( ) : Reference dimensions * Tolerance : ± 0.2 mm
s Absolute Maximum Ratings
Parameter Forward current *1 Peak forward current Reverse voltage Power dissipation Operating temperatur Storage temperature *2 Soldering temperature Symbol IF I FM VR P Topr Tstg Tsol Rating 50 1 6 75 - 25 to + 85 - 40 to + 85 260
(Ta=25˚C) Unit mA A V mW ˚C ˚C ˚C
Soldering area
* 1 Pulse width <=100µ s, Duty ratio=0.01 * 2 For 5 seconds at the position of 1.4 mm from the resin edge
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
1.4mm
GL4100
s Electro-optical Characteristics
Parameter Forward voltage Peak forward voltage Reverse current Radiant flux Peak emission wavelength Half intensity wav...
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