Silicon MOS FETs (Small Signal)
2SK664
Silicon N-Channel MOS FET
For switching
s Features q High-speed switching q S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
2.0±0.2 1.3±0.1 0.65 0.65
unit: mm
0.425
2.1±0.1 1.25±0.1
0.425
0.3–+00.1
1 3
2
0.9±0.1 0.7±0.1 0.2
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipa.