2SC4905

2SC4905 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire Features High gain bandwidth product fT = 5.8 GHz typ High gain, low noise figure PG = 12.0 dB typ, NF = 1.6 dB typ at f = 900 MHz CMPAK 3 1 2 1. Emitter 2. Base 3. Collector Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Collector to base voltage VCBO 20 V ——————————————————————————————————————————— Collector to emitter voltage VCEO 12 V ——————————————————————————————————————————— Emitter to base voltage VEBO 2 V ——————————————————————————————————————————— Collector current IC 50 mA ——————————————————————————————————————————— Collector power dissipation PC 100 mW ——————————————————————————————————————————— Junction temperature Tj 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— 2SC4905 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Collector to base breakdown voltage V(BR)CBO 20 — — V IC = 10 µA, IE = 0 ——————————————————————————————————————————— Collector cutoff current ICBO — — 10 µA VCB = 15 V, IE = 0 —————————————————————————————— ICEO ——1 mA VCE = 12 V, RBE = ∞ ——————————————————————————————————————————— Emitter cutoff current IEBO — — 10 µA VEB = 2 V, IC = 0 ————————————————————————————...