2SJ297(L), 2SJ297(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • Hi...
2SJ297(L), 2SJ297(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching
regulator, DC-DC converter Avalanche ratings
Outline
LDPAK
4
123 D G
S
4
12 3
1. Gate 2. Drain 3. Source 4. Drain
November 1996
2SJ297(L), 2SJ297(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS VGSS ID I *1
D(pulse)
IDR IAP*3 EAR*3 Pch*2
Tch
Tstg
Ratings –60 ±20 –20 –80 –20 –20 34 60 150 –55 to +150
Unit V V A A A A mJ W °C °C
2
2SJ297(L), 2SJ297(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
–60
Gate to source breakdown voltage
V(BR)GSS
±20
Gate to source leak current IGSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance
— — –1.0 — —
Forward transfer admittance Input capacitance
|yfs| Ciss
10 —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage
td(on) tr td(off)...