Document
CTD27, CDT27
Thyristor-Diode Modules, Diode-Thyristor Modules
Type
CTD/CDT27GK08 CTD/CDT27GK12 CTD/CDT27GK14 CTD/CDT27GK16 CTD/CDT27GK18
VRSM VDSM
V 900 1300 1500 1700 1900
VRRM VDRM
V 800 1200 1400 1600 1800
Dimensions in mm (1mm=0.0394")
Symbol
Test Conditions
I , ITRMS FRMS TVJ=TVJM I , ITAVM FAVM TC=85oC; 180o sine
TVJ=45oC
ITSM, IFSM
VR=0 TVJ=TVJM
VR=0
TVJ=45oC
i2dt
VR=0 TVJ=TVJM
VR=0
t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine
t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine
(di/dt)cr
TVJ=TVJM f=50Hz, tp=200us VD=2/3VDRM IG=0.45A diG/dt=0.45A/us
repetitive, IT=45A non repetitive, IT=ITAVM
(dv/dt)cr
TVJ=TVJM;
VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise)
PGM
TVJ=TVJM IT=ITAVM
tp=30us tp=300us
PGAV
VRGM
TVJ TVJM Tstg
VISOL
50/60Hz, RMS IISOL<_1mA
t=1min t=1s
Md
Mounting torque (M5) Terminal connection torque (M5)
Weight Typical including screws
Maximum Ratings
50 27 520 560 460 500 1350 1300 1050 1030 150
500
1000
10 5 0.5 10 -40...+125 125 -40...+125 3000 3600 2.5-4.0/22-35 2.5-4.0/22-35 90
Unit A
A
A2s
A/us
V/us W W V oC V~
Nm/lb.in. g
DEECorp.
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CTD27, CDT27
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol
Test Conditions
Characteristic Values
Unit
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM VT, VF IT, IF=80A; TVJ=25oC VTO For power-loss calculations only (TVJ=125oC)
rT VGT VD=6V;
IGT VD=6V;
TVJ=25oC TVJ=-40oC TVJ=25oC TVJ=-40oC
VGD TVJ=TVJM;
VD=2/3VDRM
IGD
IL
TVJ=25oC; tp=10us; VD=6V IG=0.45A; diG/dt=0.45A/us
IH TVJ=25oC; VD=6V; RGK=
tgd
TVJ=25oC; VD=1/2VDRM IG=0.45A; diG/dt=0.45A/us
tq
TVJ=TVJM; IT=20A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=20V/us; VD=2/3VDRM
QS TVJ=TVJM; IT, IF=25A; -di/dt=0.64A/us
IRM
per thyristor/diode; DC current RthJC per module
per thyristor/diode; DC current RthJK per module
dS Creeping distance on surface
dA Strike distance through air
a Maximum allowable acceleration
typ.
3 1.64 0.85 11 1.5 1.6 100 200 0.2 10
450
200
2
150
50 6 0.88 0.44 1.08 0.54 12.7 9.6 50
mA V V m V
mA V mA mA mA us
us uC A K/W
K/W mm mm m/s2
FEATURES
* International standard package * Direct copper bonded Al2O3-ceramic
base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL registered, E 72873 * Gate-cathode twin pins for version 1
APPLICATIONS
* DC motor control * Softstart AC motor controller * Light, heat and temperature
control
ADVANTAGES
* Space and weight savings * Simple mounting with two screws * Improved temperature and power
cycling * Reduced protection circuits
DEECorp.
http://store.iiic.cc/
CTD27, CDT27
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration
Fig. 2 i2dt versus time (1-10 ms)
Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode)
Fig. 2a Maximum forward current at case temperature
10 V VG
1: IGT, TVJ = 125oC 2: IGT, TVJ = 25oC
3: IGT, TVJ = -40oC
3 1 2 56
1 4
IGD, TVJ = 125oC
0.1 100 101 102
4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W
103 mA 104 IG
Fig. 4 Gate trigger characteristics
1000
TVJ = 25oC
s tgd
100
typ. Limit
3 x CTD/CDT27
10
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
1 10 100 IG
Fig. 6 Gate trigger delay time
mA 1000
DEECorp.
http://store.iiic.cc/
CTD27, CDT27
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature
3 x CTD/CDT27
CTD/CDT27 CTD/CDT27
Fig. 8 Transient thermal impedance junction to case (per thyristor or diode)
RthJC for various conduction angles d:
d DC 180oC 120oC 60oC 30oC
RthJC (K/W)
0.88 0.92 0.95 0.98 1.01
Constants for ZthJC calculation:
i R (K/W) t (s) thi i
1 0.019
0.0031
2 0.029
0.0216
3 0.832
0.191
Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode)
RthJK for various conduction angles d:
d DC 180oC 120oC 60oC 30oC
RthJK (K/W)
1.08 1.12 1.15 1.18 1.21
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
1 0.019
0.0031
2 0.029
0.0216
3 0.832
0.191
4 0.2
0.45
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