B949

Power Transistors 2SB949, 2SB949A Silicon PNP epitaxial planar type Darlington 0.7±0.1 For power amplification and switching Complementary to 2SD1275 and 2SD1275A 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 4.2±0.2 s Features 16.7±0.3 7.5±0.2 q High foward current transfer ratio hFE q High-speed switching q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to 2SB949 base voltage 2SB949A VCBO –60 –80 V 14.0±0.5 Solder Dip 4.0 φ3.1±0.1 1.3±0.2 1.4±0.1 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 Collector to 2SB949 emitter voltage 2SB949A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature VCEO VEBO ICP IC PC Tj Tstg –60 –80 –5 –4 –2 35 2 150 –55 to +150 s Electrical Characteristics (TC=25˚C) V V A A W ˚C ˚C 5.08±0.5 123 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) Internal Connection C B E Parameter Symbol Conditions min typ max Unit Collector cutoff 2SB949 current 2SB949A Collector cutoff 2SB949 current 2SB949A Emitter cutoff current Collector to emitter 2SB949 voltage 2SB949A ICBO ICEO IEBO VCEO VCB = –60V, IE = 0 VCB = –80V, IE = 0 VCB = –30V, IB = 0 VCB = –40V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 –1 mA –1 –2 mA –2 –2 mA –60 V –80 Forward current transfer ratio Base to emitter voltage Collector to emitter s...