SiHB22N60S

www.vishay.com SiHB22N60S Vishay Siliconix S Series Power MOSFET PRODUCT SUMMARY VDS at TJ max. (V) RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 98 17 25 Single 0.190 D2PAK (TO-263) D GD S G S N-Channel MOSFET FEATURES Generation One Halogen-free According to IEC 61249-2-21 Definition High EAR Capability Lower Figure-of-Merit Ron x Qg 100 % Avalanche Tested Ultra Low Ron dV/dt Ruggedness Ultra Low Gate Charge (Qg) Compliant to RoHS Directive 2002/95/EC Note * Pb containing terminations are not RoHS compliant, exemptions may apply APPLICATIONS PFC Power Supply Stages Hard Switching Topologies Solar Inverters UPS Motor Control Lighting Server Telecom ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free D2PAK (TO-263) SiHB22N60S-GE3 SiHB22N60S-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage AC (f > 1 Hz) VDS VGS Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C D2PAK (TO-263) ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Energya Maximum Power Dissipation D2PAK (TO-263) EAS EAR PD Drain-Source Voltage Slope Reverse Diode dV/dtd TJ = 125 °C dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c for 10 s TJ, Tstg Notes a. Repetitive rating; pulse wid...