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GR1K Dataheets PDF



Part Number GR1K
Manufacturers EIC discrete Semiconductors
Logo EIC discrete Semiconductors
Description GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS
Datasheet GR1K DatasheetGR1K Datasheet (PDF)

GR1A - GR1M PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS SMA (DO-214AC) 1.1 ± 0.3 5.0 ± 0.15 4.5 ± 0.15 1.2 ± 0.2 2.6 ± 0.15 2.1 ± 0.2 0.2 ± 0.07 2.0 ± 0.2 MECHANICAL DATA : * * * * * * Case : SMA Molded plastic Epoxy : UL94V-O rate flame retardant Lead : Lead Formed for Surface Mou.

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GR1A - GR1M PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS SMA (DO-214AC) 1.1 ± 0.3 5.0 ± 0.15 4.5 ± 0.15 1.2 ± 0.2 2.6 ± 0.15 2.1 ± 0.2 0.2 ± 0.07 2.0 ± 0.2 MECHANICAL DATA : * * * * * * Case : SMA Molded plastic Epoxy : UL94V-O rate flame retardant Lead : Lead Formed for Surface Mount Polarity : Color band denotes cathode end Mounting position : Any Weight : 0.067 gram Dimensions in millimeter Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Ta = 55 °C Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 1.0 A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 125 °C SYMBOL GR1A GR1B GR1D GR1G GR1J GR1K GR1M UNIT VRRM VRMS VDC IF(AV) 50 35 50 100 70 100 200 140 200 400 280 400 1.0 600 420 600 800 560 800 1000 700 1000 V V V A IFSM VF IR IR(H) Trr 35 1.3 5 150 150 15 - 65 to + 150 - 65 to + 150 250 500 A V µA µA ns pf °C °C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Junction Temperature Range Storage Temperature Range CJ TJ TSTG Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 01 : April 17, 2002 RATING AND CHARACTERISTIC CURVES ( GR1A - GR1M ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 D.U.T. 50 Vdc (approx) 1Ω PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) 0 - 0.25 Trr + - 1.0 A SET TIME BASE FOR 50/100 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 1.0 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 AVERAGE FORWARD OUTPUT CURRENT, AMPERES 0.8 PEAK FORWARD SURGE CURRENT, AMPERES 8.3 ms SINGLE HALF SINE W AVE 24 Ta = 50 ° C 0.6 18 0.4 12 0.2 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 6 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( ° C) FIG.4 - TYPICAL FORWARD CHARACTERISTICS 20 NUMBER OF CYCLES AT 60Hz FIG.5 - TYPICAL REVERSE CHARACTERISTICS FORWARD CURRENT, AMPERES 10 Pulse W idth = 300 µ s 2% Duty Cycle TJ = 25 ° C 1.0 10 TJ = 100 ° C REVERSE CURRENT, MICROAMPERES 1.0 0.1 0.1 TJ = 25 ° C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0 20 40 60 80 100 120 140 FO.


GR1K GR1K GR1M


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