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GP801DDS18

Part Number	GP801DDS18
Manufacturer	Dynex Semiconductor
Description	Dual Switch Low VCE(SAT) IGBT Module
Features	s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 800A Pe...
Published	Mar 23, 2005
Datasheet	GP801DDS18 PDF File

Features

s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 800A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 800A 1600A APPLICATIONS s s s s 12(C2) 2(C2) 4(E2) 1...

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GP801DDS18 Dual Switch Low VCE(SAT) IGBT Module - Dynex Semiconductor

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