GP401DDM18

GP401DDM18 GP401DDM18 Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information DS5397-1.2 January 2001 FEATURES s s s s s Low VCE(SAT) 400A Per Switch High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 400A 800A APPLICATIONS s s s s High Reliability Motor Controllers Traction Drives Low Loss System Retrofit 12(C2) 2(C2) 4(E2) 1(E1) 7(C1) 11(G2) 10(E2) 3(C1) 5(E1) 6(G1) The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A. The GP401DDM18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. 12 11 Fig. 1 Dual switch circuit diagram 5 6 3 7 8 1 9 4 2 ORDERING INFORMATION Order As: GP401DDM18 Note: When ordering, please use the complete part number. 10 Outline...