GP2400ESM12

GP2400ESM12 GP2400ESM12 Powerline N-Channel Single Switch IGBT Module Preliminary Information DS5360-1.1 May 2000 The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry. Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. The powerline range of high power modules includes dual and single switch configurations with a range of current and voltage capabilities to match customer system demands. This device is optimised for traction drives and other applications requiring high thermal cycling capability. VCES VCE(sat) IC IC(PK) KEY PARAMETERS 1200V (typ) 2.7V (max) 2400A (max) 4800A Outline type code: E (See package details for further information) FEATURES s s s s Fig. 1 Electrical connections - (not to scale) External connection C1 Aux C C2 C3 n - Channel ...