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Part Number GP201MHS18
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description Low VCE(SAT) Half Bridge IGBT Module
Datasheet GP201MHS18 DatasheetGP201MHS18 Datasheet (PDF)

  GP201MHS18   GP201MHS18
GP201MHS18 GP201MHS18 Low VCE(SAT) Half Bridge IGBT Module DS5290-2.1 January 2001 FEATURES s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 200A 400A APPLICATIONS s s s s 11(C2) 1(E1C2) 2(E2) 6(G2) 7(E2) 3(C1) 5(E1) 4(G1) High Reliability Inverters Motor Controllers Traction Drives Resonant Converters 9(C1) The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP201MHS18 is a half bridge 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The modu.



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