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Part Number GP200MLS12
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description IGBT Chopper Module Preliminary Information
Datasheet GP200MLS12 DatasheetGP200MLS12 Datasheet (PDF)

  GP200MLS12   GP200MLS12
GP200MLS12 GP200MLS12 IGBT Chopper Module Preliminary Information DS5421-1.5 April 2001 FEATURES s s s s Internally Configured With Lower Arm Controlled Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 200A 400A APPLICATIONS s s s s s High Power Choppers Motor Controllers Induction Heating Resonant Converters Power Supplies 11(C2) 1(A1C2) 2(E2) 6(G2) 7(E2) 3(K1) The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP200MLS12 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the lower arm of the bridge controlled. The module incoporates high current rated freewheel diodes. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorpo.



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