Part Number |
GP200MKS12 |
Manufacturers |
Dynex Semiconductor |
Logo |
|
Description |
IGBT Chopper Module Preliminary Information |
Datasheet |
GP200MKS12 Datasheet (PDF) |
GP200MLK12
GP200MKS12
IGBT Chopper Module Preliminary Information
DS5448-1.2 April 2001
FEATURES
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Internally Configured With Upper Arm Controlled Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1200V 2.7V 200A 400A
APPLICATIONS
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High Power Choppers Motor Controllers Induction Heating Resonant Converters Power Supplies
1(A,E) 2(K) 3(C) 5(E1) 4(G)
9(C1)
The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP200MLS12 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the upper arm of the bridge controlled. The module incoporates high current rated freewheel diodes. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporate.