GP200MHS18
GP200MHS18
Half Bridge IGBT Module
DS5304-3.1 January 2001
FEATURES
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Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 3.5V 200A 400A
APPLICATIONS
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High Power Inverters Motor Controllers Induction Heating Resonant...
