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GP200MHS12

Part Number	GP200MHS12
Manufacturer	Dynex Semiconductor
Description	Half Bridge IGBT Module
Published	Mar 23, 2005
Detailed Description	GP200MHS12 GP200MHS12 Half Bridge IGBT Module Replaces GP200MHB12S January 1999 version, DS4339-5.5 DS5296-1.5 November...
Datasheet	GP200MHS12 PDF File

Overview

GP200MHS12 GP200MHS12 Half Bridge IGBT Module Replaces GP200MHB12S January 1999 version, DS4339-5.
5 DS5296-1.
5 November 2000 FEATURES s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.
7V 200A 400A APPLICATIONS s s s s High Power Inverters Motor Controllers Induction Heating Resonant Converters 11(C2) 1(E1C2) 2(E2) 6(G2) 7(E2) 3(C1) 5(E1) 4(G1) 9(C1) The Powerline range of high power modules includes half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.
The GP200MHS12 is a half bridge 1200V, n channel enhancement mode, ins...

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