GN8061

GaAs MMICs GN8061 GN8061 GaAs IC For semiconductor laser drive s Features q q q 1 2 3 4 6.4±0.2 8 7 6 5 Unit : mm High output Pulse current and DC bias current can be controlled. 10max. 2.54±0.25 High-speed switching 0.7min. 4.5max. 4.0max. s Absolute Maximum Ratings (Ta = 25˚C) Parameter Power supply voltage Symbol VDD VSS VIb1* 1 VIb2 Pin voltage VIN VIp *5 Rating 6 –6 6 0.5 – 0.5 to VDD –1.5 1.5 to 6 6 55 40 225 700 150 – 55 to +150 –10 to + 75 Unit V V 0 to 15˚ 7.62±0.2 V V V V V mA mA mA mW ˚C ˚C ˚C 1 : GND 2 : VIb1 3 : VIb2 0.35max. 4 : OUT 5 : VIP 6 : VDD 7 : VIN 8 : VSS 8-Lead Plastic DIL Package VOUT* 1 Power current Output current Allowable power dissipation Channel temperature Storage temperature Operating ambient temperature *1 *2 *3 *4 *5 IDD* 4 ISS IOUT PD* 2 Tch Tstg Topr* 3 Do not apply the voltage higher than the set VDD . Guaranteed for the unit in the natural atmosphere. IC circuit functioning range. Note however that the electrical characteristics shown at Ta= 25˚C is not guaranteed. IDD is a current when the pulse output current and bias output current are zero. Voltage when the constant current source has been connected. s Electrical Characteristics (Ta = 25˚C) Parameter Pulse output current Symbol Ipmax. Ipmin. Ibmax. Bias output current Ibmin. 1 Ibmin. 2 Supply current Input voltage Rise time Fall time IDD ISS VIH VIL tr *2 *1 Test circuit 1 1 2 2 2 2 2 Condition VIN= 2.0V, VIb2= – 5V VIN= 0.4V, VIb2= – 5V IP= 0, VIb1= 5V, VIb2= 0 IP=...