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GN3A

EIC discrete Semiconductors

GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT

GN3A - GN3M PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * * * * * Glass passivated chip High current capability Hi...


EIC discrete Semiconductors

GN3A

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GN3A - GN3M PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT SMC (DO-214AB) 1 .1 ± 0.3 ± 0.15 ± 0.15 8.0 3.0 ± 0.2 0.2 ± 0.0 7 5.8 ± 0.15 7.5 2.3 ± 0.2 MECHANICAL DATA : * * * * * * Case : SMC Molded plastic Epoxy : UL94V-O rate flame retardant Lead : Lead Formed for Surface Mount Polarity : Color band denotes cathode end Mounting position : Any Weight : 0.21 gram Dimensions in millimeter Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Ta = 75 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 3.0 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL GN3A VRRM VRMS VDC IF(AV) IFSM VF IR IR(H) CJ TJ TSTG 50 35 50 GN3B GN3D GN3G GN3J GN3K GN3M UNIT V V V A A V µA µA pF °C °C 100 70 100 200 140 200 400 280 400 3.0 150 1.0 5.0 50 50 - 65 to + 175 - 65 to + 175 600 420 600 800 560 800 1000 700 1000 Typical Junction Capacitance (Note1) Junction Temperature Range Storage Temperature Ran...




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