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GN2A

EIC discrete Semiconductors

GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT

GN2A - GN2M PRV : 50 - 1000 Volts Io : 2.0 Amperes FEATURES : * * * * * Glass passivated chip High current capability Hi...


EIC discrete Semiconductors

GN2A

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GN2A - GN2M PRV : 50 - 1000 Volts Io : 2.0 Amperes FEATURES : * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT SMB (DO-214AA) 1.1 ±0.3 ± ± 2.0 ±0.1 ±0.15 2.3 0.22 ±0.07 3.6 ±0.2 MECHANICAL DATA : * Case : SMB Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Lead Formed for Surface Mount * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.093 gram Dimensions in millimeter Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Ta = 50 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 2.0 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL GN2A VRRM VRMS VDC IF(AV) 50 35 50 GN2B 100 70 100 GN2D 200 140 200 GN2G 400 280 400 2.0 GN2J 600 420 600 GN2K 800 560 800 GN2M 1000 700 1000 UNIT Volts Volts Volts Amps. IFSM VF IR IR(H) CJ TJ TSTG 50 1.0 5.0 50 75 - 65 to + 150 - 65 to + 150 Amps. Volts µA µA pF °C °C Typical Junction Capacitance (Note1) Junction Temperature Range Storage Temperature Rang...




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