GaAs IC (with built-in ferroelectric)
GaAs MMIC
GN01100B
GaAs IC (with built-in ferroelectric)
Unit: mm
0.425
1.25±0.1
• Super miniature S-Mini 6-pin packa...
Description
GaAs MMIC
GN01100B
GaAs IC (with built-in ferroelectric)
Unit: mm
0.425
1.25±0.1
Super miniature S-Mini 6-pin package (2125 size) Transmitter amplifier : Wide dynamic range on low operation current : Gain control function built-in
R0.2 1 0.65 2 0.65 3
0.425
2.0±0.1
0.2
6 - 0° to 10°
Parameter Power supply voltage Circuit current Gate control voltage Max input power Allowable power dissipation Operating ambient temperature Storage temperature
Symbol VDD IDD VAGC PIN PD Topr T stg
Ratings 5 80 0 to 3 −5 150 − 30 to + 90 −40 to + 120
Unit V mA V dBm mW °C °C
EIAJ : SC-88
0 to 0.1
1 : RFIN 4 : VDD2 2 : V DD1 5 : GND 3 : VAGC 6 : VREF S Mini Type Package (6-pin)
Marking Symbol : HU
s Electrical Characteristics VDD1=VDD2=3.0 V, f=906 MHz, Ta=25 °C±3 °C
Parameter Circuit current Power gain 1 Power gain 2
*1 *1 *1
Symbol IDD PG1 PG2 DR
* 1, 2
Conditions VAGC=2.0 V, PIN=−20 dBm VAGC=2.0 V, PIN=−20 dBm VAGC=0.5 V, PIN=−20 dBm PG1 − PG2 Pin =− 20 dBm VAGC=2.0 V, POUT=5 dBm IS-95 modulation, 900 kHz Detuning 30 kHz Bandwidth VAGC= 2.0 V, Pout=5 dBm IS-95 modulation, 1.98 MHz Detuning 30 kHz Bandwidth
min
typ 37
0.7±0.1 0.9±0.1
s Absolute Maximum Ratings Ta=25 °C
max 45 −5
Unit mA dB dB dB
20
23 − 10
Dynamic range Gain control sensitivity Adjacent channel leakage power (ACP) 1 *1, 3 Adjacent channel leakage power (ACP) 1 *1, 3
30 25
34 49 − 54 90 − 50
GS ACP1
dB/V dBc
ACP2
− 74
− 65
dBc
Note) *1 : Refer to measurement circuit. *2 : {PG(VAGC=1.6V)[dB]− ...
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