Document
STD11N65M2, STP11N65M2, STU11N65M2
Datasheet
N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2 Power MOSFET in DPAK, TO-220 and IPAK packages
TAB 3
DPAK 1
TAB
TAB
TO-220
1 23
IPAK
123
D(2, TAB)
G(1)
S(3)
NG1D2TS3Z
Features
Order code
VDS
RDS(on) max.
ID
STD11N65M2
STP11N65M2
650 V
0.68 Ω
7A
STU11N65M2
• Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected
PTOT 85 W
Package DPAK TO-220 IPAK
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Product status link STD11N65M2 STP11N65M2 STU11N65M2
DS10348 - Rev 6 - June 2019 For further information contact your local STMicroelectronics sales office.
www.st.com
STD11N65M2, STP11N65M2, STU11N65M2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
Gate-source voltage
Drain current (continuous) at Tcase = 25 °C ID
Drain current (continuous) at Tcase = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at Tcase = 25 °C
dv/dt (2)
Peak diode recovery voltage slope
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg
Storage temperature range
Tj
Operating junction temperature range
1. Pulse width limited by Tjmax. 2. ISD ≤ 7 A, di/dt ≤ 400 A/μs, VDS (peak) ≤ V(BR)DSS, VDS = 400 V 3. VDS ≤ 520 V.
Value ±25
7 4.4 28 85 15 50
-55 to 150
Unit V A A W
V/ns
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-amb
Thermal resistance junction-ambient
Rthj-pcb (1)
Thermal resistance junction-pcb
1. When mounted on a 1-inch² FR-4, 2 Oz copper board.
DPAK 50
Value TO-220 1.47
62.5
Unit IPAK
100
°C/W
Table 3. Avalanche characteristics
Symbol
Parameter
IAR (1)
Avalanche current, repetitive or not repetitive
EAS (2)
Single pulse avalanche energy
1. Pulse width limited by Tjmax. 2. starting Tj = 25 °C, ID = IAR, VDD = 50 V.
Value
Unit
1.5
A
110
mJ
DS10348 - Rev 6
page 2/27
STD11N65M2, STP11N65M2, STU11N65M2
Electrical characteristics
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4. Static
Symbol Parameter
Test conditions
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = 1 mA
IDSS
IGSS VGS(th) RDS(on)
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
Static drain-source onresistance
VGS = 0 V, VDS = 650 V VGS = 0 V, VDS = 650 V, Tcase = 125 °C(1) VDS = 0 V, VGS = ±25 V VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.5 A
1. Defined by design, not subject to production test.
Min. 650
2
Typ.
3 0.60
Max.
1 100 ±10
4 0.68
Unit V
µA µA V Ω
Table 5. Dynamic
Symbol Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Input capacitance
-
.