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STP11N65M2 Dataheets PDF



Part Number STP11N65M2
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STP11N65M2 DatasheetSTP11N65M2 Datasheet (PDF)

STD11N65M2, STP11N65M2, STU11N65M2 Datasheet N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2 Power MOSFET in DPAK, TO-220 and IPAK packages TAB 3 DPAK 1 TAB TAB TO-220 1 23 IPAK 123 D(2, TAB) G(1) S(3) NG1D2TS3Z Features Order code VDS RDS(on) max. ID STD11N65M2 STP11N65M2 650 V 0.68 Ω 7A STU11N65M2 • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected PTOT 85 W Package DPAK TO-220 IPAK Applications • Switching ap.

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STD11N65M2, STP11N65M2, STU11N65M2 Datasheet N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2 Power MOSFET in DPAK, TO-220 and IPAK packages TAB 3 DPAK 1 TAB TAB TO-220 1 23 IPAK 123 D(2, TAB) G(1) S(3) NG1D2TS3Z Features Order code VDS RDS(on) max. ID STD11N65M2 STP11N65M2 650 V 0.68 Ω 7A STU11N65M2 • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected PTOT 85 W Package DPAK TO-220 IPAK Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status link STD11N65M2 STP11N65M2 STU11N65M2 DS10348 - Rev 6 - June 2019 For further information contact your local STMicroelectronics sales office. www.st.com STD11N65M2, STP11N65M2, STU11N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at Tcase = 25 °C ID Drain current (continuous) at Tcase = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at Tcase = 25 °C dv/dt (2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range Tj Operating junction temperature range 1. Pulse width limited by Tjmax. 2. ISD ≤ 7 A, di/dt ≤ 400 A/μs, VDS (peak) ≤ V(BR)DSS, VDS = 400 V 3. VDS ≤ 520 V. Value ±25 7 4.4 28 85 15 50 -55 to 150 Unit V A A W V/ns °C Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Rthj-pcb (1) Thermal resistance junction-pcb 1. When mounted on a 1-inch² FR-4, 2 Oz copper board. DPAK 50 Value TO-220 1.47 62.5 Unit IPAK 100 °C/W Table 3. Avalanche characteristics Symbol Parameter IAR (1) Avalanche current, repetitive or not repetitive EAS (2) Single pulse avalanche energy 1. Pulse width limited by Tjmax. 2. starting Tj = 25 °C, ID = IAR, VDD = 50 V. Value Unit 1.5 A 110 mJ DS10348 - Rev 6 page 2/27 STD11N65M2, STP11N65M2, STU11N65M2 Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA IDSS IGSS VGS(th) RDS(on) Zero gate voltage drain current Gate-body leakage current Gate threshold voltage Static drain-source onresistance VGS = 0 V, VDS = 650 V VGS = 0 V, VDS = 650 V, Tcase = 125 °C(1) VDS = 0 V, VGS = ±25 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 3.5 A 1. Defined by design, not subject to production test. Min. 650 2 Typ. 3 0.60 Max. 1 100 ±10 4 0.68 Unit V µA µA V Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance - .


STD11N65M2 STP11N65M2 STU11N65M2


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