H11D1

HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. H11D1 H11D2 H11D3 H11D4 4N38 FEATURES High Voltage - H11D1, H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V High isolation voltage - 5300 VAC RMS - 1 minute - 7500 VAC PEAK - 1 minute Underwriters Laboratory (UL) recognized File# E90700 ANODE 1 6 BASE APPLICATIONS Power supply regulators Digital logic inputs Microprocessor inputs Appliance sensor systems Industrial controls CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER ABSOLUTE MAXIMUM RATINGS Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C Derate above 25°C EMITTER *Forward DC Current *Reverse Input Voltage *Forward Current - Peak (1µs pulse, 300pps) *LED Power Dissipation @ TA = 25°C Derate above 25°C Symbol TSTG TOPR TSOL PD IF VR IF(pk) PD Value -55 to +150 -55 to +100 260 for 10 sec 260 3.5 80 6.0 3.0 150 1.41 Units °C °C °C mW mW/°C mA V A mW mW/°C 8/9/00 200046A HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1, H11D2, H11D3, H11D4, 4N38 ABSOLUTE MAXIMUM RATINGS (Cont.) Parameter DETECTOR *Power Dissipation @ TA = 25°C Derate linearly above 25°C H11D1 - H11D2 *Colle...