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H11B255 Dataheets PDF



Part Number H11B255
Manufacturers QT Optoelectronics
Logo QT Optoelectronics
Description PHOTODARLINGTON OPTOCOUPLERS
Datasheet H11B255 DatasheetH11B255 Datasheet (PDF)

PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current • Meets or exceeds all JEDEC Registered Specifications • VDE 0884 approval available as a test option -add option .300. (e.g., H11B1.300) 6 1 6 1 ANODE 1 6 BASE SCHEMATIC APPLICATIONS • • • • • Low power logic cir.

  H11B255   H11B255



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PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current • Meets or exceeds all JEDEC Registered Specifications • VDE 0884 approval available as a test option -add option .300. (e.g., H11B1.300) 6 1 6 1 ANODE 1 6 BASE SCHEMATIC APPLICATIONS • • • • • Low power logic circuits 6 Telecommunications equipment Portable electronics Solid state relays Interfacing coupling systems of different potentials and impedances. CATHODE 2 5 COLLECTOR 1 N/C 3 4 EMITTER Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C Derate above 25°C EMITTER Continuous Forward Current Reverse Voltage Forward Current - Peak (300 µs, 2% Duty Cycle) LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Symbol TSTG TOPR TSOL PD IF VR IF(pk) PD Device All All All All All All All All CNX48U, TIL113 H11B1, H11B2 Value -55 to +150 -55 to +100 260 for 10 sec 250 3.3 100 6 3.0 100 1.8 30 25 55 Units °C °C °C mW mW/°C mA V A mW mW/°C Collector-Emitter Breakdown Voltage BVCEO H11B3 H11B255 MOC8080 CNX48U, H11B1 H11B2, H11B3 V 30 V Collector-Base Breakdown Voltage BVCBO TIL113 H11B255 MOC8080 55 7 150 2.0 V V mW mW/°C Emitter-Collector Breakdown Voltage Detector Power Dissipation @ TA = 25°C Derate above 25°C BVECO PD All All 6/1/00 200042A PHOTODARLINGTON OPTOCOUPLERS CNX48U H11B1 MOC8080 TIL113 ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) H11B2 H11B255 H11B3 INDIVIDUAL COMPONENT CHARACTERISTICS Parameter EMITTER (IF = 10 mA) Input Forward Voltage VF Test Conditions Symbol Device H11B1, H11B2 H11B255 MOC8080 TIL113 CNX48U MOC8080 H11B3 IR C All All CNX48U BVCEO TIL113 H11B1, H11B2 H11B3 H11B255 MOC8080 CNX48U, H11B1 Collector-Base Breakdown Voltage (IC = 100 µA, IF = 0) Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current Note ** Typical values at TA = 25°C (IE = 100 µA, IB = 0) (VCE = 10 V, Base Open) BVECO ICEO (IC = 100 µA, IE = 0) BVCBO H11B2, H11B3 TIL113 H11B255 MOC8080 All All 55 7 100 10 1 100 V nA 30 100 V 25 55 60 70 V 30 0.9 0.7 1.2 1.3 1.05 1.35 0.001 50 60 1.3 1.7 1.4 1.5 10 µA pF 0.8 1.2 1.5 V Min Typ** Max Unit (IF = 10 mA) (IF = 10 mA, TA = -55°C) (IF = 10 mA, TA = 100°C) (IF = 50 mA) Reverse Leakage Current Capacitance DETECTOR (VR = 6 V) (VF = 0 V, f = 1.0 MHz) (IC = 1 mA, IF = 0) (IC = 100 µA, IF = 0) (IC = 10 mA, IF = 0) (IC = 100 µA, IF = 0) (IC = 1 mA, IF = 0) Collector-Emitter Breakdown Voltage 6/1/00 200042A PHOTODARLINGTON OPTOCOUPLERS CNX48U H11B1 MOC8080 TIL113 TRANSFER CHARACTERISTICS DC Characteristics (TA = 25°C Unless otherwise specified.) Symbol Device MOC8080 H11B255 CNX48U TIL113 IC (CTR) (IF = 1 mA, VCE = 5 V) (IF = 1 mA, VCE = 1 V) (IF = 0.5 mA, VCE = 1 V) (IF =1 mA, IC =.


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