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H11AV3X Dataheets PDF



Part Number H11AV3X
Manufacturers ETC
Logo ETC
Description OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT
Datasheet H11AV3X DatasheetH11AV3X Datasheet (PDF)

H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l Dimensions in mm 2.54 7.0 6.0 1.2 7.62 6.62 7.62 4.0 3.0 0.5 3.0 0.5 3.35 0.26 13° Max 1 2 3 6 5 4 VDE 0884 in 3 available lead form : - STD - G form l l - SMD approved to CECC 00802 Certified to EN60950 by the following Test Bodies :Nemko - Certificate No. P01102464 Fimko - Certificate No. FI18166 Semko - Reference No..

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H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l Dimensions in mm 2.54 7.0 6.0 1.2 7.62 6.62 7.62 4.0 3.0 0.5 3.0 0.5 3.35 0.26 13° Max 1 2 3 6 5 4 VDE 0884 in 3 available lead form : - STD - G form l l - SMD approved to CECC 00802 Certified to EN60950 by the following Test Bodies :Nemko - Certificate No. P01102464 Fimko - Certificate No. FI18166 Semko - Reference No. 0202037/01-22 Demko - Certificate No. 311158-01 BSI approved - Certificate No. 8001 DESCRIPTION The H11AV series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High BVCEO (70V min) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l DC motor controllers l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances OPTION SM SURFACE MOUNT OPTION G ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION 70V 70V 6V 160mW 60mA 6V 105mW 7.62 0.6 0.1 10.46 9.86 1.25 0.75 0.26 10.16 Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 11/3/03 ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail [email protected] http://www.isocom.com DB92055m-AAS/A2 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Current (IR) Output Collector-emitter Breakdown (BVCEO) ( note 2 ) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) H11AV1 H11AV2 H11AV3 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO 5300 7500 70 70 6 50 MIN TYP MAX UNITS 1.2 1.5 10 V µA TEST CONDITION IF = 10mA VR = 6V IC = 1mA IC = 100µA IE = 100µA VCE = 10V 10mA IF , 10V VCE 10mA IF , 10V VCE 10mA IF , 10V VCE 20mA IF , 2mA IC See note 1 See note 1 VIO = 500V (note 1) VCC = 5V , fig 1 IF= 10mA, RL = 75Ω V V V nA Coupled 100 50 20 300 % % % V VRMS VPK Ω 0.4 Input-output Isolation Resistance RISO 5x1010 Rise Time, tr Fall Time, tf 2 2 µs µs Note 1 Note 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. VCC Input RL = 75Ω Output Output 10% tr tf ton toff 10% 90% 90% FIG 1 11/3/03 DB92055m-AAS/A2 Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation PC (mW) Collector Current vs. Collector-emitter Voltage 50 TA = 25°C 50 30 20 15 20 10 0 10 IF = 5mA 150 Collector current IC (mA) 40 30 100 50 0 -30 0 25 50 75 100 125 Ambient temperature TA ( °C ) Collector-emitter saturation voltage VCE(SAT) (V) Forward Current vs. Ambient Temperature 80 70 Forward current IF (mA) 60 50 40 30 20 10 0 -30 0 25 50 75 100 125 Ambient temperature TA ( °C ) Relative Current Transfer Ratio vs. Ambient Temperature 1.5 0 2 4 6 8 10 Collector-emitter voltage VCE ( V ) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 100 IF = 20mA IC = 2mA Relative Current Transfer Ratio vs. Forward Current 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 2 5 VCE = 10V TA = 25°C Relative current transfer ratio IF = 10mA VCE = 10V 1.0 0.5 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 100 Relative current transfer ratio 10 20 50 Forward current IF (mA) DB92055m-AAS/A2 11/3/03 .


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